MoS2 dual-gate transistors with electrostatically doped contacts
نویسندگان
چکیده
منابع مشابه
MoS2 transistors with 1-nanometer gate lengths.
Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) t...
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Ultrathin molybdenum disulphide (MoS2) has emerged as an interesting layered semiconductor because of its finite energy bandgap and the absence of dangling bonds. However, metals deposited on the semiconducting 2H phase usually form high-resistance (0.7 kΩ μm-10 kΩ μm) contacts, leading to Schottky-limited transport. In this study, we demonstrate that the metallic 1T phase of MoS2 can be locall...
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ژورنال
عنوان ژورنال: Nano Research
سال: 2019
ISSN: 1998-0124,1998-0000
DOI: 10.1007/s12274-019-2478-5